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Abstract

2D materials have unique properties that can be utilized in designing next-generation logic and interconnects or supporting the design and implementation of in-memory computing architecture. I will start my presentation by introducing the fundamental material properties of 2D transition metal dichalcogenides (TMDs), focusing on how their layer thickness affects electronic performance and highlighting the differences between sulfides and selenides.   Next, I will present statistical studies of high-performance 2D TMD transistors and discuss the key design parameters and process conditions that have large impact on these “interface only” devices.  The advantage of these atomically thin channels with larger bandgaps (compared to Si) and Schottky Barrier FET design vs. MOSFET design will be discussed for ultimate transistor scaling. Furthermore, I will introduce a powerful machine learning approach designed to optimize the device design and process conditions. This approach analyzes over a thousand device characteristics to achieve multiple threshold voltages that are required for modern digital applications. Finally, I will briefly present our evaluation of 2D materials as an alternative barrier/liner to replace the conventional TaN/Ta bilayer in the back end of line applications, showing these 2D materials are capable of efficiently blocking Cu diffusion while improving the line resistance of ultra-scaled Cu interconnects.

About the Speaker

Before joining Purdue University’s Elmore School of Electrical and Computer Engineering in 2010, Zhihong Chen was a research staff member at the IBM T.J. Watson Research Center. In 2008, she assumed the role of Manager for IBM’s Carbon Technology Group, leading initiatives in the exploration and development of carbon-based technologies for commercial use. At Purdue, Chen’s research focuses on the design and fabrication of novel materials, devices, and circuits for beyond-CMOS applications and novel computing schemes. Her leadership includes serving as the director of the SRC nCORE NEW LIMITS Center, a collaborative, multi-university initiative dedicated to 2D materials research. Since 2023, Chen has held the position of the Mary Jo and Robert L. Kirk Director of the Birck Nanotechnology Center.  She served as the Technical Program Chair for the 2020 Device Research Conference and as its General Chair in 2021. She also served as the Program Chair and later as the General Chair for the International Interconnect Technology Conference since 2022. She is an IEEE Fellow for her contributions to the understanding and applications of low-dimensional nanomaterials.